JPS60780A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS60780A
JPS60780A JP58108683A JP10868383A JPS60780A JP S60780 A JPS60780 A JP S60780A JP 58108683 A JP58108683 A JP 58108683A JP 10868383 A JP10868383 A JP 10868383A JP S60780 A JPS60780 A JP S60780A
Authority
JP
Japan
Prior art keywords
forming
gate electrode
insulating film
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58108683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0439772B2 (en]
Inventor
Keiichi Ohata
恵一 大畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58108683A priority Critical patent/JPS60780A/ja
Publication of JPS60780A publication Critical patent/JPS60780A/ja
Publication of JPH0439772B2 publication Critical patent/JPH0439772B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58108683A 1983-06-17 1983-06-17 電界効果トランジスタの製造方法 Granted JPS60780A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58108683A JPS60780A (ja) 1983-06-17 1983-06-17 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58108683A JPS60780A (ja) 1983-06-17 1983-06-17 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS60780A true JPS60780A (ja) 1985-01-05
JPH0439772B2 JPH0439772B2 (en]) 1992-06-30

Family

ID=14491016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58108683A Granted JPS60780A (ja) 1983-06-17 1983-06-17 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS60780A (en])

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254966A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd ショットキーゲート電界効果トランジスタの製造方法
JPS63221642A (ja) * 1987-03-10 1988-09-14 Mitsubishi Electric Corp 半導体装置の配線構造

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6254966A (ja) * 1985-09-04 1987-03-10 Hitachi Ltd ショットキーゲート電界効果トランジスタの製造方法
JPS63221642A (ja) * 1987-03-10 1988-09-14 Mitsubishi Electric Corp 半導体装置の配線構造

Also Published As

Publication number Publication date
JPH0439772B2 (en]) 1992-06-30

Similar Documents

Publication Publication Date Title
US5275872A (en) Polycrystalline silicon thin film transistor
JPH05326952A (ja) 半導体装置およびその製造方法
JPS63313870A (ja) 自己整列電界効果トランジスタおよびその製造方法
US5093700A (en) Single gate structure with oxide layer therein
KR100202048B1 (ko) 전력-mos 반도체 장치의 제조공정 및 그에 따른 장치
US4660276A (en) Method of making a MOS field effect transistor in an integrated circuit
KR950027916A (ko) 반도체장치의 제조방법
JPS60780A (ja) 電界効果トランジスタの製造方法
JPS603158A (ja) 電界効果トランジスタの形成方法
JPS59202669A (ja) 半導体装置とその製造方法
JPS6064430A (ja) ＧａＡｓ系化合物半導体装置の製造方法
JPH03165066A (ja) 多結晶シリコン薄膜トランジスタ及びその製造方法
JP2838315B2 (ja) 半導体装置及びその製造方法
JPS59169179A (ja) 半導体集積回路装置
JPH02288341A (ja) Ｍｉｓ型半導体装置
KR100334866B1 (ko) 반도체소자의트랜지스터형성방법
JPS62154755A (ja) 半導体装置の電極
JPH01298758A (ja) 半導体装置の製造方法
EP0434383B1 (en) Semiconductor device gate structure with oxide layer therein
KR19980058438A (ko) 반도체 소자의 실리사이드 형성 방법
JPH0391245A (ja) 薄膜半導体装置とその製造方法
JPH0783026B2 (ja) 電界効果トランジスタの製造方法
JPS60107867A (ja) 半導体装置とその製法
JPS63142872A (ja) 自己整合型電界効果トランジスタの製造方法
JPH0380542A (ja) 半導体集積回路装置